Effects of high-dose hydrogen implantation on defect formation and dopant diffusion in silver implanted ZnO crystals

Journal Article · Thu Jul 28 04:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4958849· OSTI ID:22597784

Yaqoob, Faisal ^[1]; Huang, Mengbing ^[2]

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1. Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)
2. College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203 (United States)

This work reports on the effects of a deep high-dose hydrogen ion implant on damage accumulation, defect retention, and silver diffusion in silver implanted ZnO crystals. Single-crystal ZnO samples were implanted with Ag ions in a region ∼150 nm within the surface, and some of these samples were additionally implanted with hydrogen ions to a dose of 2 × 10{sup 16 }cm{sup −2}, close to the depth ∼250 nm. Rutherford backscattering/ion channeling measurements show that crystal damage caused by Ag ion implantation and the amount of defects retained in the near surface region following post-implantation annealing were found to diminish in the case with the H implantation. On the other hand, the additional H ion implantation resulted in a reduction of substitutional Ag atoms upon post-implantation annealing. Furthermore, the presence of H also modified the diffusion properties of Ag atoms in ZnO. We discuss these findings in the context of the effects of nano-cavities on formation and annihilation of point defects as well as on impurity diffusion and trapping in ZnO crystals.

• OSTI ID: 22597784
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 120; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
ATOMS
BUILDUP
CRYSTAL DEFECTS
DEFECTS
DIFFUSION
DOPED MATERIALS
DOSES
HYDROGEN IONS
ION CHANNELING
ION IMPLANTATION
MONOCRYSTALS
POINT DEFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILVER
SILVER IONS
SURFACES
ZINC OXIDES