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Title: Ion behaviour in pulsed plasma regime by means of Time-resolved energy mass spectroscopy (TREMS) applied to an industrial radiofrequency Plasma Immersion Ion Implanter PULSION registered

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2401508· OSTI ID:20891828
;  [1];  [2]
  1. Equipe Plasma Surface, Laboratoire PIIM, UMR CNRS 6633, Universite de Provence, case 241, 13397 Marseille cedex 20 (France)
  2. ION BEAM SERVICES, ZI Peynier-Rousset, rue Gaston Imbert Prolongee, 13790 Peynier (France)

In order to face the requirements for P+/N junctions requested for < 45 nm ITRS nodes, new doping techniques are studied. Among them Plasma Immersion Ion Implantation (PIII) has been largely studied. IBS has designed and developed its own PIII machine named PULSION registered . This machine is using a pulsed plasma. As other modem technological applications of low pressure plasma, PULSION registered needs a precise control over plasma parameters in order to optimise process characteristics. In order to improve pulsed plasma discharge devoted to PIII, a nitrogen pulsed plasma has been studied in the inductively coupled plasma (ICP) of PULSION registered and an argon pulsed plasma has been studied in the helicon discharge of the laboratory reactor of LPIIM (PHYSIS). Measurements of the Ion Energy Distribution Function (IEDF) with EQP300 (Hidden) have been performed in both pulsed plasma. This study has been done for different energies which allow to reconstruct the IEDF resolved in time (TREMS). By comparing these results, we found that the beginning of the plasma pulse, named ignition, exhaust at least three phases, or more. All these results allowed us to explain plasma dynamics during the pulse while observing transitions between capacitive and inductive coupling. This study leads in a better understanding of changes in discharge parameters as plasma potential, electron temperature, ion density.

OSTI ID:
20891828
Journal Information:
AIP Conference Proceedings, Vol. 866, Issue 1; Conference: IIT 2006: 16. international conference on ion implantation technology, Marseille (France), 11-16 Jun 2006; Other Information: DOI: 10.1063/1.2401508; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English