Cluster size effects of gas cluster ion beams on surface modification

Journal Article · Mon Nov 13 04:00:00 EST 2006 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2401497· OSTI ID:20891818

Toyoda, N; Yamada, I ^[1]

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1. Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigori, Hyogo, 678-1205 (Japan)

In the gas cluster ion beam (GCIB) processes, number of atoms in a cluster ion or ''cluster size'' is one of the most important parameter on the surface interaction processes because it defines the equivalent bombarding energy of individual atom (eV/atom). In this study, cluster size effects on damage formations, sputtering yields were studied using size controlled GCIB systems. Damage formation in crystalline Si substrate showed significant drop at the cluster size where energy per atom was below 5 eV/atom. Sputtering yields of Au by one Ar atom in cluster showed linear relationship with the energy per atom of cluster ions. Threshold energy for sputtering was far below that with Ar monomer ions due to the near surface energy deposition by Ar cluster ion bombardments.

• OSTI ID: 20891818
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 866; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON IONS
ATOMIC CLUSTERS
ATOMS
DEPOSITION
ION IMPLANTATION
ION PAIRS
MONOMERS
SILICON
SPUTTERING
SUBSTRATES
SURFACE ENERGY
SURFACE TREATMENTS
THRESHOLD ENERGY