Some studies on successive ionic layer adsorption and reaction (SILAR) grown indium sulphide thin films

Journal Article · Wed Jun 15 04:00:00 EDT 2005 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2005.02.013· OSTI ID:20889787

Pathan, H M ^[1]; Lokhande, C D ^[1]; Kulkarni, S S ^[1]; Amalnerkar, D P ^[2]; Seth, T ^[2]; Han, Sung-Hwan ^[3]

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1. Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India)
2. Centre for Materials for Electronic Technology (C-MET), Off Pashan Road, Panchavati, Pune 411 008 (India)
3. Inorganic Nano-Materials, Department of Chemistry, Hanyang University, Sungdong-Ku, Haengdang-dong 17, Seoul 133-791 (Korea, Republic of)

Indium sulphide (In{sub 2}S{sub 3}) thin films were grown on amorphous glass substrate by the successive ionic layer adsorption and reaction (SILAR) method. X-ray diffraction, optical absorption, scanning electron microscopy (SEM) and Rutherford back scattering (RBS) were applied to study the structural, optical, surface morphological and compositional properties of the indium sulphide thin films. Utilization of triethanolamine and hydrazine hydrate complexed indium sulphate and sodium sulphide as precursors resulted in nanocrystalline In{sub 2}S{sub 3} thin film. The optical band gap was found to be 2.7 eV. The film appeared to be smooth and homogeneous from SEM study.

• OSTI ID: 20889787
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 6 Vol. 40; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ADSORPTION
BACKSCATTERING
CRYSTALS
EV RANGE 01-10
GLASS
HYDRATES
HYDRAZINE
INDIUM SULFIDES
LAYERS
NANOSTRUCTURES
OPTICAL PROPERTIES
PRECURSOR
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
SULFATES
THIN FILMS
X-RAY DIFFRACTION