Room temperature deposition of ZnSe thin films by successive ionic layer adsorption and reaction (SILAR) method

Journal Article · Mon Oct 04 00:00:00 EDT 2004 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2004.06.014· OSTI ID:20883036

Kale, R B ^[1]; Lokhande, C D ^[2]

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1. Department of Physics, Rajaram College, Kolhapur 416004, Maharashtra (India)
2. Thin Film Physics Laboratory, Department Of Physics, Shivaji University, Kolhapur 416004, Maharashtra (India)

The zinc selenide (ZnSe) thin films are deposited onto glass substrate using relatively simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The films are deposited using zinc acetate sodium selenosulphate precursors. The concentration, pH, immersion and rinsing times and number of immersion cycles have been optimized to obtain good quality ZnSe thin films. The X-ray diffraction (XRD) study and scanning electron microscopy (SEM) studies reveals nanocrystalline nature alongwith some amorphous phase present in ZnSe thin films. Energy dispersive X-ray (EDAX) analysis shows that the films are Se deficient. From optical absorption data, the optical band gap 'E{sub g}' for as-deposited thin film was found to be 2.8 eV and electrical resistivity in the order of 10{sup 7} {omega} cm.

• OSTI ID: 20883036
• Journal Information: Materials Research Bulletin, Vol. 39, Issue 12; Other Information: DOI: 10.1016/j.materresbull.2004.06.014; PII: S0025-5408(04)00209-0; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
AMORPHOUS STATE
CRYSTALS
ELECTRIC CONDUCTIVITY
EV RANGE 01-10
GLASS
NANOSTRUCTURES
PH VALUE
SCANNING ELECTRON MICROSCOPY
SODIUM
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION
ZINC
ZINC SELENIDES