InAs nanowire formation on InP(001)
- London Centre for Nanotechnology, Department of Chemistry, Imperial College London, London SW7 2AZ (United Kingdom)
The heteroepitaxial growth of InAs on InP(001) by solid source molecular beam epitaxy has been studied for a range of different growth temperatures and annealing procedures. Atomic force microscopy images show that nanowires are formed for deposition in the temperature range of 400-480 deg. C, and also following high temperature annealing (480 deg. C) after deposition at 400 deg. C. The wires show preferential orientation along <110> and often exhibit pronounced serpentine behavior due to the presence of kinks, an effect that is reduced at increasing growth temperature. The results suggest that the serpentine behavior is related to the degree of initial surface order. Kinks in the wires appear to act as nucleation centers for In adatoms migrating along the wires during annealing, leading to the coexistence of large three-dimensional islands.
- OSTI ID:
- 20884920
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 11; Other Information: DOI: 10.1063/1.2399326; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001)