Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
- Instituto de Microelectronica de Madrid, Centro Nacional de Microelectronica, Consejo Superior de Investigaciones Cientificas, Isaac Newton 8, PTM Tres Cantos, 28760, Madrid (Spain)
Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H*). The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 deg. C and different doses of H* were used; after this, the growth proceeded without H* while the temperature was increased slowly with time. The incorporation of H* drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly.
- OSTI ID:
- 21064494
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 1; Other Information: DOI: 10.1063/1.2824967; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
InGaAs quantum wells on wafer-bonded InP/GaAs substrates
Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy