Photoluminescence of Tb{sup 3+} doped SiN{sub x} films grown by plasma-enhanced chemical vapor deposition

Journal Article · Sun Oct 15 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2358301· OSTI ID:20884772

Zhizhong, Yuan; Dongsheng, Li; Minghua, Wang; Peiliang, Chen; Daoren, Gong; Lei, Wang; Deren, Yang ^[1]

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1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

Room temperature photoluminescence (PL) properties of the Tb{sup 3+} ion implanted nonstoichiometric silicon nitride (Tb{sup 3+}:SiN{sub x}) and silicon dioxide (Tb{sup 3+}:SiO{sub x}) were studied. The films were deposited by plasma-enhanced chemical vapor deposition and then annealed at different temperatures for 1 h in flowing N{sub 2} before or after the implantation. Results show that there are four intense PL peaks due to the intra-4f transitions of Tb{sup 3+} in the wavelength from 470 to 625 nm for both kinds of films. Moreover, after postannealing at 1000 deg. C, the integrated PL intensity of Tb{sup 3+}:SiN{sub x} is much higher than that of Tb{sup 3+}:SiO{sub x}. The energy transfer from the defect related energy levels to the Tb{sup 3+} ions will enhance the {sup 5}D{sub 4}{yields}{sup 7}F{sub k} (k=3-6) luminescence of Tb{sup 3+} ions.

• OSTI ID: 20884772
• Journal Information: Journal of Applied Physics, Vol. 100, Issue 8; Other Information: DOI: 10.1063/1.2358301; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL VAPOR DEPOSITION
COATINGS
CRYSTAL DEFECTS
DOPED MATERIALS
ENERGY TRANSFER
ION IMPLANTATION
PHOTOLUMINESCENCE
PLASMA
SILICON NITRIDES
SILICON OXIDES
STOICHIOMETRY
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 1000-4000 K
TERBIUM IONS
THIN FILMS
TIME DEPENDENCE