Enhanced electrical characteristics of Au nanoparticles embedded in high-k HfO{sub 2} matrix

Journal Article · Fri Sep 15 00:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2347703· OSTI ID:20884747

Yang, Jung Yup; Kim, Ju Hyung; Choi, Won Joon; Do, Young Ho; Kim, Chae Ok; Hong, Jin Pyo ^[1]

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1. New Functional Materials and Devices Laboratory, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of)

We present experimental results for laser-induced Au nanoparticle (NP) embedded in a HfO{sub 2} high-k dielectric matrix. Cross-sectional transmission electron microscopy images showed that the Au NPs of 8 nm in diameter were clearly embedded in HfO{sub 2} matrix. Capacitance-voltage measurements of Pt/HfO{sub 2}/Au NPs/HfO{sub 2} on p-type Si substrate reliably exhibited metal-oxide-semiconductor behavior with a large flatband shift of 4.7 V. In addition, the charge retention time at room temperature was found to exceed 10{sup 5} h. This longer time was attributed to the higher electron barrier height via high work function of the Au NP.

• OSTI ID: 20884747
• Journal Information: Journal of Applied Physics, Vol. 100, Issue 6; Other Information: DOI: 10.1063/1.2347703; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRONS
GOLD
HAFNIUM OXIDES
LASERS
NANOSTRUCTURES
PARTICLES
PLATINUM
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
WORK FUNCTIONS