Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy

Journal Article · Mon Jan 01 00:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2428402· OSTI ID:20883251

Bauer, Jan; Fleischer, Frank; Breitenstein, Otwin; Schubert, Luise; Werner, Peter; Goesele, Ulrich; Zacharias, Margit ^[1]

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1. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D-06120 (Germany)

Single undoped Si nanowires were electrically characterized. The nanowires were grown by molecular-beam epitaxy on n{sup +} silicon substrates and were contacted by platinum/iridium tips. I-V curves were measured and electron beam induced current investigations were performed on single nanowires. It was found that the nanowires have an apparent resistivity of 0.85 {omega} cm, which is much smaller than expected for undoped Si nanowires. The conductance is explained by hopping conductivity at the Si-SiO{sub 2} interface of the nanowire surface.

• OSTI ID: 20883251
• Journal Information: Applied Physics Letters, Vol. 90, Issue 1; Other Information: DOI: 10.1063/1.2428402; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
INTERFACES
IRIDIUM
MOLECULAR BEAM EPITAXY
PLATINUM
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SUBSTRATES