Mitigation of fast ions from laser-produced Sn plasma for an extreme ultraviolet lithography source

Journal Article · Mon Sep 11 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2349831· OSTI ID:20883230

Tao, Y; Tillack, M S ^[1]

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1. Department of Mechanical and Aerospace Engineering, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 (United States) and the Center for Energy Research, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093-0438 (United States)

The authors present evidence of the reduction of fast ion energy from laser-produced Sn plasma by introducing a low energy prepulse. The energy of Sn ions was reduced from more than 5 keV to less than 150 eV nearly without loss of the in-band conversion from laser to 13.5 nm extreme ultraviolet (EUV) emission as compared with that of a single pulse. The reason may come from the interaction of the main pulse with preplasma instead of the full density solid surface. This makes it possible to use the full density Sn target in the practical EUV lithography source.

• OSTI ID: 20883230
• Journal Information: Applied Physics Letters, Vol. 89, Issue 11; Other Information: DOI: 10.1063/1.2349831; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EV RANGE 100-1000
EXTREME ULTRAVIOLET RADIATION
KEV RANGE 01-10
LASER-PRODUCED PLASMA
LASERS
LIGHT TRANSMISSION
MITIGATION
PLASMA PRODUCTION
PULSES
TIN
TIN IONS