Enhancements of extreme ultraviolet emission using prepulsed Sn laser-produced plasmas for advanced lithography applications
- Center for Materials Under Extreme Environment, School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
Laser-produced plasmas (LPP) from Sn targets are seriously considered to be the light source for extreme ultraviolet (EUV) next generation lithography, and optimization of such a source will lead to improved efficiency and reduced cost of ownership of the entire lithography system. We investigated the role of reheating a prepulsed plasma and its effect on EUV conversion efficiency (CE). A 6 ns, 1.06 {mu}m Nd:yttrium aluminum garnet laser was used to generate the initial plasma that was then reheated by a 40 ns, 10.6 {mu}m CO{sub 2} laser to generate enhanced EUV emission from a planar Sn target. The effects of prepulsed laser intensity and delay timings between the prepulsed and the pumping pulse were investigated to find the optimal pre-plasma conditions before the pumping pulse. The initial optimization of these parameters resulted in 25% increase in CE from the tin LPP. The cause of increased EUV emission was identified from EUV emission spectra and ion signal data.
- OSTI ID:
- 22036748
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 8; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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