Evaluation of integrity and barrier performance of atomic layer deposited WN{sub x}C{sub y} films on plasma enhanced chemical vapor deposited SiO{sub 2} for Cu metallization
- School of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)
The nucleation and growth of WN{sub x}C{sub y} films deposited by atomic layer deposition (ALD) on plasma enhanced chemical vapor deposited (PECVD) SiO{sub 2} is characterized as a function of the number of ALD cycles using transmission electron microscopy analysis. The island growth of isolated WN{sub x}C{sub y} nanocrystals is directly observed at the early stages of film growth. The nucleation of the WN{sub x}C{sub y} film can be significantly enhanced by NH{sub 3} plasma treatment before the deposition of WN{sub x}C{sub y}. The capacitance-voltage measurements conducted after bias-temperature stressing reveals that an ALD-WN{sub x}C{sub y} film deposited with a thickness of approximately 5.2 nm on the NH{sub 3} plasma-treated PECVD SiO{sub 2} shows good diffusion barrier performance against Cu migration.
- OSTI ID:
- 20883177
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 8; Other Information: DOI: 10.1063/1.2338768; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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