Chemical vapor deposition of WN{sub x}C{sub y} using the tungsten piperidylhydrazido complex Cl{sub 4}(CH{sub 3}CN)W(N-pip): Deposition, characterization, and diffusion barrier evaluation

Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3106625· OSTI ID:22053515

Kim, Dojun; Kim, Oh Hyun; Anderson, Tim; Koller, Juergen; McElwee-White, Lisa; Leu, Lii-Cherng; Tsai, Joseph M; Norton, David P ^[1]

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1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611-6005 (United States)

The tungsten piperidylhydrazido complex Cl{sub 4}(CH{sub 3}CN)W(N-pip) (1) was used for film growth of tungsten carbonitride (WN{sub x}C{sub y}) by metal-organic chemical vapor deposition (CVD) in the absence and presence of ammonia (NH{sub 3}) in H{sub 2} carrier. The microstructure of films deposited with NH{sub 3} was x-ray amorphous between 300 and 450 deg. C. The chemical composition of films deposited with NH{sub 3} exhibited increased N levels and decreased C levels over the entire deposition temperature range (300-700 deg. C) as compared to films deposited without NH{sub 3}. As determined by x-ray photoelectron spectroscopy, W is primarily bonded to N and C for films deposited at 400 deg. C, but at lower deposition temperature the binding energy of the W-O bond becomes more evident. The growth rates of films deposited with NH{sub 3} varied from 0.6 A/min at 300 deg. C to 4.2 A/min at 600 deg. C. Over 600 deg. C, the growth rate decreased when using NH{sub 3} presumably due to parasitic gas phase reactions that deplete the precursor. Diffusion barrier properties were investigated using Cu/WN{sub x}C{sub y}/Si stacks consisting of 100 nm Cu deposited at room temperature by reactive sputtering on a 20 nm WN{sub x}C{sub y} film deposited at 400 deg. C by CVD. X-ray diffraction and cross-sectional transmission electron microscopy were used to determine the performance of the diffusion barrier. Cu/WN{sub x}C{sub y}/Si stacks annealed under N{sub 2} at 500 deg. C for 30 min maintained the integrity of both Cu/WN{sub x}C{sub y} and WN{sub x}C{sub y}/Si interfaces.

• OSTI ID: 22053515
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 4; Other Information: (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACETONITRILE
AMMONIA
BINDING ENERGY
CHEMICAL VAPOR DEPOSITION
COPPER
CRYSTAL STRUCTURE
DIFFUSION BARRIERS
HYDROGEN
INTERFACES
MICROSTRUCTURE
ORGANOMETALLIC COMPOUNDS
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN CARBIDES
TUNGSTEN NITRIDES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY