Optical characteristics and microstructure of ZnO quantum dots-SiO{sub 2} nanocomposite films prepared by sputtering methods

Journal Article · Mon Nov 20 00:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2387111· OSTI ID:20880096

Peng, Y -Y; Hsieh, T -E; Hsu, C -H ^[1]

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1. Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan 300 (China)

ZnO quantum dots (QDs)-SiO{sub 2} nanocomposite films were prepared using the target-attached radio-frequency sputtering. The transmission electron microscopy revealed the uniform dispersion of ZnO QDs with diameters about 2-7 nm in amorphous SiO{sub 2} matrix. The photoluminescence showed that small ZnO QDs are able to emit white light with luminescence spectra similar to those of the present GaN-based light emitting diode (LED). The calculated chromaticity coordinates of emitting light evidenced the feasibility of ZnO QDs-SiO{sub 2} nanocomposite films as the fluorescence material in optoelectronic devices.

• OSTI ID: 20880096
• Journal Information: Applied Physics Letters, Vol. 89, Issue 21; Other Information: DOI: 10.1063/1.2387111; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPOSITE MATERIALS
CRYSTAL STRUCTURE
FLUORESCENCE
GALLIUM NITRIDES
LIGHT EMITTING DIODES
MICROSTRUCTURE
PHOTOLUMINESCENCE
QUANTUM DOTS
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPUTTERING
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VISIBLE RADIATION
ZINC OXIDES