Generalized Keller-Simmons formula for nonisothermal plasma-assisted sputtering depositions
A general description of the relation between the sputtering rate and the deposition rate in plasma-assisted sputtering deposition has been developed. The equation derived yields the so-called Keller-Simmons [IBM J. Res. Dev. 23, 24 (1979)] formula in the limit of zero thermal gradients in the deposition system. It is shown that the Keller-Simmons formula can still be applied to fit the experimental results if the characteristic pressure-distance product, p{sub 0}L{sub 0}, is related to the temperature of the sputter cathode and the growing film. Using this relation, it is found that the variations in the values for p{sub 0}L{sub 0} for different experimental conditions agree with the thus far not well understood experimental trends reported in the literature.
- OSTI ID:
- 20880093
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 21; Other Information: DOI: 10.1063/1.2392830; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Gas heating in plasma-assisted sputter deposition
Radio-frequency magnetron sputter deposition of ultrathick boron carbide films