Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1056 (United States)
Deuterated p-type GaN(Mg,{sup 2}H) films were irradiated at room temperature with 1 MeV protons to create native point defects with a concentration approximately equal to the Mg doping (5x10{sup 19} cm{sup -3}). The samples were then annealed isothermally at a succession of temperatures while monitoring the infrared absorption due to the H local mode of the MgH defect. As the samples were annealed, the MgH absorption signal decreased and a new mode at slightly higher frequency appeared, which has been associated with the approach of a mobile nitrogen interstitial. We used the time dependence of the MgH absorption to obtain a diffusion barrier of the nitrogen interstitial in p-type GaN of 1.99 eV. This is in good agreement with theoretical calculations of nitrogen interstitial motion in GaN.
- OSTI ID:
- 20880013
- Journal Information:
- Journal of Applied Physics, Vol. 100, Issue 4; Other Information: DOI: 10.1063/1.2207554; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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