Interaction of defects and H in proton-irradiated GaN(Mg, H)

Journal Article · Sun May 01 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1883309· OSTI ID:20713914

Myers, S M; Seager, C H ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1056 (United States)

Magnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of the H, and photoluminescence. The results support the annihilation of Ga Frenkel pairs near room temperature, leaving the N interstitial and N vacancy to influence the elevated-temperature behavior. Multiple changes are observed with increasing temperature, ending with thermal release of the H above 700 deg. C. These effects are interpreted in terms of a succession of complexes involving Mg, the point defects, and H.

• OSTI ID: 20713914
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 9; Other Information: DOI: 10.1063/1.1883309; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ANNEALING
ANNIHILATION
DOPED MATERIALS
EPITAXY
FRENKEL DEFECTS
GALLIUM NITRIDES
HYDROGEN
IMPURITIES
INTERSTITIALS
IRRADIATION
LAYERS
MAGNESIUM
MEV RANGE
NUCLEAR REACTION ANALYSIS
PHOTOLUMINESCENCE
PROTON BEAMS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K