Photooxidation of plasma polymerized polydimethylsiloxane film by 172 nm vacuum ultraviolet light irradiation in dilute oxygen
- Material Analysis and Research Center, Seiko Epson Corporation, Fujimi-machi, Nagano 399-0293 (Japan)
Plasma polymerized polydimethylsiloxane films irradiated under different partial pressures of oxygen with a 172 nm vacuum ultraviolet light were investigated in order to clarify the roles of molecular oxygen and photons in photooxidation. The thickness, densities, surface roughness, elemental compositions, and molecular structures of the irradiated and unirradiated films were examined by using glazing incidence x-ray reflectivity, Rutherford backscattering, infrared, and x-ray absorption (XAS) spectroscopies. Photooxidation is hardly promoted by irradiation in a high vacuum of 1x10{sup -4} Pa, though photodesorption of the methyl group and formation of Si-H bonds were observed. Silica films thicker than 140 nm were formed at room temperature by irradiating them in low pressure oxygen gases. The degree of oxidation was smaller for the oxygen pressure of 10 kPa than for 83 Pa. Si K-edge XAS was performed to clarify the change of coordination environment of silicon by photooxidation in dilute oxygen flow containing less than 5 ppm of molecular oxygen.
- OSTI ID:
- 20879983
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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