Ion cutting and transfer of sub-100-nm silicon layers using low-keV H, D, and He ions

Journal Article · Mon Oct 09 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2361182· OSTI ID:20860983

Desrosiers, Nicholas; Terreault, Bernard ^[1]

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1. INRS-EMT, Universite du Quebec, 1650 Boul. Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

The authors have investigated the ion cutting and transfer of silicon layers thinner than 100 nm using 5-8 keV H, D, or He ions. The thickness and morphology of the transferred layers have been characterized as a function of ion fluence. Ion cutting of bonded layers occurs in a much wider fluence range than blistering of free surfaces. The optimal surface roughness (2 nm) is obtained with rather high H or D doses of (7-8)x10{sup 16} at./cm{sup 2}, although the threshold dose is 1.5x10{sup 16} H/cm{sup 2} only. These results demonstrate the importance of the boundary conditions imposed on the splitting process by the bonded wafer.

• OSTI ID: 20860983
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BOUNDARY CONDITIONS
DEUTERIUM IONS
HELIUM IONS
HYDROGEN IONS
ION BEAMS
KEV RANGE 01-10
LAYERS
MORPHOLOGY
ROUGHNESS
SEMICONDUCTOR MATERIALS
THICKNESS