Lattice accommodation of epitaxial Bi(111) films on Si(001) studied with SPA-LEED and AFM
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Experimentelle Physik, Universitaet Duisburg-Essen, Lotharstr. 1, 47048 Duisburg (Germany)
The growth of Bi on a Si(001) surface is studied in situ by spot profile analyzing low-energy electron diffraction and ex situ by atomic force microscopy. A continuous epitaxial Bi(111) film with a thickness of 6 nm is grown at 150 K in a bilayer growth mode. During annealing to 450 K the lattice mismatch between Si(001) and Bi(111) is accommodated by a periodic interfacial misfit dislocation array. On this relaxed template, Bi(111) films can be grown to any desired thickness. Such films are composed of twinned and 90 deg. rotated micrometer sized Bi(111) crystallites with a roughness of less than 0.6 nm for a 30 nm thick film.
- OSTI ID:
- 20853886
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 19 Vol. 74; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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