Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

Journal Article · Sat Jul 15 04:00:00 EDT 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.74.041306· OSTI ID:20853348

Sarigiannidou, E; Monroy, E; Bellet-Amalric, E; Mariette, H ^[1]; Wilhelm, F; Rogalev, A; Goulon, J ^[2]; Galera, R M; Cibert, J ^[3]

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1. CEA-CNRS-UJF group 'Nanophysique et Semiconducteurs', DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
2. European Synchrotron Radiation Facility (ESRF), Boite Postale 220, 38043 Grenoble (France)
3. Laboratoire Louis Neel, CNRS, Boite Postale 166, 38042 Grenoble (France)

Intrinsic ferromagnetism in the high-quality wurtzite Ga{sub 0.937}Mn{sub 0.063}N semiconductor is unambiguously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism. The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by x-ray diffraction and x-ray linear dichroism. The Curie temperature of a (Ga,Mn)N sample with 6.3% Mn is {approx_equal}8 K with a spontaneous magnetic moment of 2.4{mu}{sub B} per Mn at 2 K.

• OSTI ID: 20853348
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 4 Vol. 74; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURIE POINT
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GALLIUM NITRIDES
MAGNETIC CIRCULAR DICHROISM
MAGNETIC MOMENTS
MAGNETIZATION
MANGANESE NITRIDES
MOLECULAR BEAM EPITAXY
PLASMA
PROCESSING
SEMICONDUCTOR MATERIALS
X RADIATION
X-RAY DIFFRACTION