Low bandgap a-Si:H film with better stability prepared by RF PECVD method using helium dilution
Book
·
OSTI ID:208124
- IACS, Calcutta (India). Energy Research Unit
Low bandgap a-Si:H films have been prepared by RF PECVD method (13.56 MHz) using helium as diluent to silane gas. Helium dilution and chamber pressure play an important role to reduce optical gap at substrate temperature {approximately}210 C. This highly photosensitive low bandgap material showed less light induced degradation compared to that for normal bandgap a-Si:H material. Single junction solar cell having efficiency 7.2% (1 cm{sup 2} area) and spectral response up to 850 nm have been fabricated using 1.6 eV a-Si:H film.
- OSTI ID:
- 208124
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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