Improvement of film stability of a-Si:H deposited by RPCVD using SiH{sub 2}Cl{sub 2}

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208123

Chu, M K; Byun, J S; Jeon, H B ^[1]

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1. Kyung Hee Univ., Seoul (Korea, Republic of). Dept. of Physics; and others

Hydrogenated amorphous silicon (A-Si:H) films were prepared by remote plasma chemical vapor deposition (RPCVD) using SiH{sub 4}/SiH{sub 2}Cl{sub 2}/He/H{sub 2} mixtures. The defect density and Urbach energy of a-Si:H(:Cl) were found to be little affected by a small addition of SiH{sub 2}Cl{sub 2} in SiH{sub 4}. A small addition of H{sub 2} in SiH{sub 2}Cl{sub 2}/SiH{sub 4} mixture improved the film quality. The authors deposited a-Si:H(:Cl) films with 6 at.% of hydrogen content and with 3 {times} 10{sup 15} cm{sup {minus}3} defect density which exhibited very small photoconductivity degradation during AM-1 illumination.

• OSTI ID: 208123
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
EXPERIMENTAL DATA
FABRICATION
FLOW RATE
HELIUM
HYDROGEN
PHOTOCONDUCTIVITY
SERVICE LIFE
SILANES
SILICON
SILICON CHLORIDES
SILICON SOLAR CELLS
VAPOR DEPOSITED COATINGS