Intrinsic microcrystalline silicon ({micro}c-Si:H) -- A promising new thin film solar cell material
Book
·
OSTI ID:208090
- Univ. de Neuchatel (Switzerland). Inst. de Microtechnique
Compensated microcrystalline silicon is obtained by adding 8--20 ppm diborane in the plasma gas phase. p-i-n cells with such i-layers have increased infrared sensitivity, when compared to a-Si:H p-i-n cells.The preparation of the world`s first mixed stacked a-Si:H/{micro}c-Si:H tandem cell with an initial efficiency of 9.1% is reported. The {micro}c-Si:H cells showed no degradation of the cell performance under intense light-soaking. Typical properties of the {micro}c-Si:H cell indicate that the electronic transport is dominated by the crystalline phase of the material.
- OSTI ID:
- 208090
- Report Number(s):
- CONF-941203--; ISBN 0-7803-1459-X
- Country of Publication:
- United States
- Language:
- English
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