RF sputtered films of Cu-doped and N-doped ZnTe

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208079

Bohn, R G; Tabory, C N; Deak, C; Shao, M; Compaan, A D ^[1]; Reiter, N ^[2]

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1. Univ. of Toledo, OH (United States). Dept. of Physics and Astronomy
2. Solar Cells, Inc., Toledo, OH (United States)

Polycrystalline thin film solar cells using the CdS/CdTe structure have good efficiencies but the ideal low resistance ohmic contact to the p-type CdTe which is stable has jet to be developed. A good candidate for this contact would be p-type ZnTe produced by sputtering, which is a process that is scalable to large areas. The authors have successfully doped ZnTe with copper and nitrogen using rf planar magnetron sputtering For the copper doping, resistivities as low as 0.01 ohm-cm have been achieved. Raman spectra have been used as an indicator of film quality. Nitrogen doping was achieved by introducing small amounts of molecular nitrogen into the argon sputter gas during ZnTe deposition. A minimum film resistivity of about 20 ohm-cm was obtained for films grown using approximately a 5% N{sub 2}/Ar ratio at a pressure of 18 mTorr and a substrate temperature in the vicinity of 400 C. Here, again, Raman spectra were used to check on film quality by comparing to that of pure ZnTe.

• OSTI ID: 208079
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CADMIUM TELLURIDE SOLAR CELLS
COPPER ADDITIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
FABRICATION
NITROGEN ADDITIONS
RAMAN SPECTROSCOPY
SPUTTERING
X-RAY SPECTROSCOPY
ZINC TELLURIDES