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Development of rf sputtered, Cu-doped ZnTe for use as a contact interface layer to p-CdTe

Journal Article · · Journal of Electronic Materials
DOI:https://doi.org/10.1007/BF02655462· OSTI ID:171469
; ; ; ; ;  [1]
  1. National Renewable Energy Lab., Golden, CO (United States)
Cu-doped ZnTe films deposited by rf-magnetron sputtering have been analyzed with the intention to use this material as a contact interface in CdS/CdTe thin-film photovoltaic solar-cell devices. It is observed that unless careful attention is made to the pre-deposition conditioning of the ZnTe target, the electrical resistivity of thin films (nearly 70 nm) will be significantly higher than that measured on thicker films (nearly 1.0 {mu}m). It is determined that N contamination of the target during substrate loading is likely responsible for the increased film resistivity. The effect of film composition on the electrical properties is further studied by analyzing films sputtered from targets containing various Cu concentrations. It is determined that, for targets fabricated from stoichiometric ZnTe and metallic Cu, the extent of Zn deficiency in the film is dependent on both sputtering conditions and the amount of metallic Cu in the target. It is observed that the carrier concentration of the film reaches a maximum value of nearly 3 x 10{sup 20} cm{sup -3} when the concentrations of Te and (Zn+Cu) are nearly equal. For the conditions used, this optimum film stoichiometry results when the concentration of metallic Cu in the target is nearly 6 at.%. 6 refs., 6 figs.
Sponsoring Organization:
USDOE
OSTI ID:
171469
Journal Information:
Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 10 Vol. 24; ISSN JECMA5; ISSN 0361-5235
Country of Publication:
United States
Language:
English

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