Study on the interfacial structure and junction depth of polycrystalline Cu(In,Ga)Se{sub 2} devices
- National Renewable Energy Lab., Golden, CO (United States)
- Brookhaven National Lab., Upton, NY (United States). Dept. of Physics
X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS) have been used to characterize the surface-versus-bulk composition, electronic, and physical structure of polycrystalline Cu(In,Ga)Se{sub 2} thin-film interfaces. Angle-resolved high resolution photoemission measurements on the valence band electronic structure and Cu 2p, In 3d, Ga 2p, and Se 3d core lines were used to evaluate the surface and near-surface chemistry of CuInSe{sub 2} and Cu(In,Ga)Se{sub 2} device-grade thin films. XPS compositional depth profiles were also acquired from the near-surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Results of these measurements are related to device efficiencies to show the effects of compositional variations and defect concentrations in the near-surface region on device performance.
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 208061
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%389
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
- Country of Publication:
- United States
- Language:
- English
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