Development of ZnO/ZnSe/CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} thin-film solar cells with band gap of 1.3 to 1.5 eV

Conference · Sat Dec 31 00:00:00 EST 1994

OSTI ID:208047

Ohtake, Yasutoshi; Yamada, Akira; Konagai, Makoto ^[1]; Kushiya, Katsumi ^[2]

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1. Tokyo Inst. of Tech. (Japan). Dept. of Electrical and Electronic Engineering
2. Showa Shell Sekiyu, Atsugi, Kanagawa (Japan). Central R and D Lab.

From the standpoint of environmental safety, the establishment of the process to fabricate Cd-free buffer layers is significantly desirable. In this study, ZnSe has been employed as a buffer layer together with a new fabrication method which has been named as an atomic layer deposition (ALD) method in order to deposit ZnSe continuously on polycrystalline CIGS thin-film absorber in the form of an atomic layer epitaxy (ALE) method. The currently best efficiency of polycrystalline CIGS thin-film solar cells with ZnSe buffer layer by the ALD method is 11.6%.

• OSTI ID: 208047
• Report Number(s): CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%375
• Resource Relation: Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
FABRICATION
INDIUM SELENIDE SOLAR CELLS
ZINC SELENIDES
MOLECULAR BEAM EPITAXY
X-RAY DIFFRACTION
ENERGY GAP
CURRENT DENSITY
QUANTUM EFFICIENCY