Development of Cu(InGa)Se{sub 2} thin film solar cells with Cd-free buffer layers

Book · Mon Dec 30 23:00:00 EST 1996

OSTI ID:417671

Konagai, M; Ohtake, Y; Okamoto, T ^[1]

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1. Tokyo Inst. of Tech. (Japan)

Cu(InGa)Se{sub 2}(CIGS) thin film absorbers were fabricated by a three-stage method using a coevaporation apparatus. As a Cd-free buffer layer, ZnSe, In{sub x}Se{sub y} and ZnIn{sub x}Se{sub y} and ZnIn{sub x}Se{sub y} buffer layers have been deposited on the CIGS absorber continuously in the same apparatus. Atomic layer deposition (ALD) was employed as a growth technique for ZnSe. This technique offers a good thickness control as well as a good surface coverage. By irradiating with a solar simulator, all the solar cell parameters increased drastically for the first 50 minutes of the irradiation and then saturated at longer irradiation times. This phenomenon did not appear for the cells with a CdS buffer layer. The best efficiency of ZnO/ZnSe/CIGS thin film solar cells with about 10 nm thick ZnSe buffer layer was 11.6%. On the other hand, ZnO/In{sub x}Se{sub y}/CIGS thin film solar cells showed very stable characteristics under the light illumination, and initial measurements show an efficiency of 13.0%.

• OSTI ID: 417671
• Report Number(s): CONF-960401--; ISBN 1-55899-329-0
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ALUMINIUM
AUGER ELECTRON SPECTROSCOPY
COPPER SELENIDES
CRYSTAL STRUCTURE
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRODES
EXPERIMENTAL DATA
FILL FACTORS
GALLIUM SELENIDES
GLASS
INDIUM SELENIDES
MOLYBDENUM
PERFORMANCE
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SPECTRAL RESPONSE
SUBSTRATES
X-RAY DIFFRACTION
ZINC OXIDES
ZINC SELENIDES