A novel method of synthesizing p-CuInSe{sub 2} thin films from the stacked elemental layers using a closed graphite box

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208039

Adurodija, F O; Carter, M J; Hill, R ^[1]

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1. Univ. of Northumbria, Newcastle upon Tyne (United Kingdom). Newcastle Photovoltaics Applications Centre

The Stacked Elemental Layer (SEL) technique has been demonstrated as a method for producing films over a large area, but the films normally annealed in vacuum, mostly exhibited poor morphology with small grain sizes < 1 {micro}m which result in poor devices. A novel method of fabricating CuInSe{sub 2} films by annealing or selenization of the Cu, In and Se layers deposited onto Mo coated glass substrates in a closed graphite box was developed. SEM, EDX and XRD were used to characterize all films. Dense films with crystal sizes of about 4 {micro}m were obtained over an area of 15 cm{sup 2}. The mechanical properties of CuInSe{sub 2} formed from various SEL sequences of In, Cu and Se layers on different substrates was also investigated. A sequence starting with an In layer (In/Cu/In/Se) was found to produce the best adhesion on Mo coated glass, however, the adhesion was found to depend on the thickness of the first In layer. A thin In layer produced the best adhesion, increasing the thickness of the In layer resulted in poor adhesion. Devices with efficiency of 6.5% have been achieved using the absorbers processed in the graphite box. The low efficiency was due to a high series resistance in the cells.

• OSTI ID: 208039
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
CRYSTAL STRUCTURE
EXPERIMENTAL DATA
FABRICATION
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
MECHANICAL PROPERTIES
P-TYPE CONDUCTORS
PHYSICAL VAPOR DEPOSITION
QUANTUM EFFICIENCY
SCANNING ELECTRON MICROSCOPY
VAPOR DEPOSITED COATINGS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY