The impact of controlled sodium incorporation on rapid thermal processed Cu(InGa)Se{sub 2}-thin films and devices

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:208028

Probst, V; Rimmasch, J; Riedl, W; Stetter, W; Holz, J; Harms, H; Karg, F ^[1]; Schock, H W ^[2]

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1. Siemens AG Corporate Research and Development, Muenchen (Germany)
2. Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

The alkali content of Cu(InGa)Se{sub 2} thin films fabricated by RTP on a dense molybdenum backelectrode is below the detection limit of ESCA. Starting from this virtually sodium-free case, alkali impurities are successively added in order to study their impact on film morphology and device performance. Two novel techniques have been developed to add sodium to the chalcopyrite thin film: (1) by shifting the stress of the Mo-backelectrode from compressive to tensile its alkali permeability increases and in consequence so does the alkali content in the CIGS film; (2) adding sodium compounds directly to the Cu-In-Ga-Se precursor film controls the final alkali content in CIGS independent from the substrate. Along with the addition of sodium a significant increase in performance of CIGS/CdS/ZnO cells (1.85 cm{sup 2} active area) was found that peaked at 13.2%.

• OSTI ID: 208028
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

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EXPERIMENTAL DATA
GALLIUM SELENIDES
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
METALLURGICAL EFFECTS
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SODIUM
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