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Title: High efficiency Cu(In,Ga)Se{sub 2}-based solar cells: Processing of novel absorber structures

Book ·
OSTI ID:208013
; ;  [1]
  1. National Renewable Energy Lab., Golden, CO (United States); and others

Effort towards the attainment of high performance devices has yielded several devices with total-area conversion efficiencies above 16%, the highest measuring 16.8% under standard reporting conditions (ASTM E892-87, Global 1,000 W/m{sup 2}). The first attempts to translate this development to larger areas resulted in an efficiency of 12.5% for a 16.8-cm{sup 2} monolithically interconnected submodule test structure, and 15.3% for a 4.85-cm{sup 2} single cell. Achievement of a 17.2% device efficiency fabricated for operation under concentration (22-sun) is also reported. All high efficiency devices reported here are made from graded bandgap absorbers. Bandgap grading is achieved by compositional Ga/(In+Ga) profiling as a function of depth. The fabrication schemes to achieve the graded absorbers, the window materials and contacting will be described.

DOE Contract Number:
AC36-83CH10093
OSTI ID:
208013
Report Number(s):
CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%341
Resource Relation:
Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
Country of Publication:
United States
Language:
English