Sequential deposition of Cu(In,Ga)(S,Se){sub 2}
- Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik
Several sequential deposition processes for Cu(In,Ga)(S,Se){sub 2} leading to highly efficient thin film solar cells are described. Secondary phases and interdiffusion determine the growth mechanism of a process consisting of InSe{sub x} and Cu deposition at a low substrate temperature followed by a high temperature selenization step. Complex phase transitions are involved in the formation of CuInS{sub 2} by this inverted process. The presence of a secondary CuS phase leads to a complete recrystallization of the film. Alloys of CuInSe{sub 2} with CuInS{sub 2} can be formed with the inverted process. Devices based on these absorber layers exhibit efficiencies up to nearly 16% for Cu(In,Ga)Se{sub 2} and nearly 12% for CuInS{sub 2}.
- OSTI ID:
- 208012
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9616%%340
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty fourth IEEE photovoltaic specialists conference -- 1994. Volume 1; PB: 1303 p.
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
COPPER SELENIDE SOLAR CELLS
FABRICATION
PERFORMANCE
COPPER SULFIDE SOLAR CELLS
INDIUM SELENIDE SOLAR CELLS
COPPER SELENIDES
DEPOSITION
COPPER SULFIDES
INDIUM SELENIDES
INDIUM SULFIDES
GALLIUM SELENIDES
GALLIUM SULFIDES
PRECURSOR
TEMPERATURE DISTRIBUTION
SCANNING ELECTRON MICROSCOPY
X-RAY DIFFRACTION
QUANTUM EFFICIENCY