skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fabrication and Characterization of YBCO Coated Conductors by Inclined Substrate Deposition

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2192418· OSTI ID:20800189
;  [1]; ;  [2]
  1. Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  2. UES, Inc., Dayton, Ohio 45432 (United States)

Inclined substrate deposition (ISD) is an effective method for rapid fabrication of high-quality template layers for YBCO-coated conductors. We have deposited biaxially textured ISD-MgO films on flexible metallic tapes in a reel-to-reel system by electron-beam evaporation at rapid deposition rates, 2-10 nm{center_dot}s-1. Strontium ruthenium oxide (SRO) buffer and YBCO films were grown by pulsed laser deposition (PLD). Pole figure analysis of a meter-long ISD-MgO tape was carried out by X-ray diffraction using a Bruker's D8 DISCOVER equipped with GADDS (general area detection diffraction system). The c-axis of the ISD-MgO film was tilted away from substrate normal. A full-width at half maximum (FWHM) of {approx_equal}10 deg. was observed from the {phi}-scan of the MgO (002) diffraction measured on samples deposited with 35 deg. inclination angle. Surface morphology measured by atomic force microscopy revealed a roof-tile shaped structure for the ISD-MgO films. Through the use of the SRO buffer, biaxial alignment in the YBCO film deposited on the ISD-MgO template was improved. The {phi}-scan FWHM was 5.8 deg. for the YBCO (005) diffraction. We have measured the critical transition temperature Tc = 91 K and transport critical current density Jc >1.6x106 A{center_dot}cm-2 at 77 K in self-field on a SRO-buffered YBCO film grown with ISD-MgO architecture.

OSTI ID:
20800189
Journal Information:
AIP Conference Proceedings, Vol. 824, Issue 1; Conference: Cryogenic engineering conference, Keystone, CO (United States), 29 Aug - 2 Sep 2005; Other Information: DOI: 10.1063/1.2192418; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English