Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy

Journal Article · Mon May 01 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2197059· OSTI ID:20795808

Ferdous, M S; Sun, X Y; Wang, X; Fairchild, M N; Hersee, S D ^[1]

---

1. Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)

The density of dislocations in n-type GaN was measured by photoelectrochemical etching. A 10x reduction in dislocation density was observed compared to planar GaN grown at the same time. Cross-sectional transmission electron microscopy studies indicate that defect reduction is due to the mutual cancellation of dislocations with equal and opposite Burger's vectors. The nanoheteroepitaxy sample exhibited significantly higher photoluminescence intensity and higher electron mobility than the planar reference sample.

• OSTI ID: 20795808
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DISLOCATIONS
ELECTRON MOBILITY
ETCHING
GALLIUM NITRIDES
LAYERS
NANOSTRUCTURES
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY