In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries

Journal Article · Wed Feb 15 00:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2172703· OSTI ID:20787890

Yoshitani, Masayoshi; Akasaka, Koichiro; Wang, Xinqiang; Che, Song-Bek; Ishitani, Yoshihiro; Yoshikawa, Akihiko ^[1]

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1. Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST-program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy under different surface stoichiometries were characterized by in situ spectroscopic ellipsometry in the range from 0.731 eV (1697 nm) to 4.95 eV (250 nm). Nitrogen polarity InN epilayers were grown at 600 deg. C on GaN-underlayer/sapphire substrate. The surface stoichiometry during growth was changed by varying the indium-beam flux under the same nitrogen-beam flux. It was found that the pseudodielectric functions were drastically affected by the surface stoichiometry. The dielectric functions of InN grown under different stoichiometries were obtained. Both real and imaginary parts of the dielectric functions tended to be larger with increasing In-beam flux.

• OSTI ID: 20787890
• Journal Information: Journal of Applied Physics, Vol. 99, Issue 4; Other Information: DOI: 10.1063/1.2172703; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
ELLIPSOMETRY
EV RANGE 01-10
GALLIUM NITRIDES
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
NITROGEN
PLASMA
RADIOWAVE RADIATION
SAPPHIRE
SEMICONDUCTOR MATERIALS
STOICHIOMETRY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K