Surface and interface study of pulsed-laser-deposited off-stoichiometric NiMnSb thin films on a Si(100) substrate

Journal Article · Sun Jan 15 00:00:00 EST 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.73.0· OSTI ID:20787846

Rai, S; Tiwari, M K; Lodha, G S; Modi, M H ^[1]; Chattopadhyay, M K; Majumdar, S; Roy, S B ^[2]; Gardelis, S ^[3]; Viskadourakis, Z ^[3]; Giapintzakis, J ^[3]; Nandedkar, R V ^[1]; Chaddah, P ^[2]

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1. X-ray Optics Section, Synchrotron Utilization and Materials Research Division, Centre for Advanced Technology, Indore 452013 (India)
2. Magnetic and Superconducting Materials Section, Synchrotron Utilization and Materials Research Division, Centre for Advanced Technology, Indore 452013 (India)
3. Foundation for Research and Technology-Hellas, IESL, 711 10 Heraklion, Crete (Greece)

We report a detailed study of surface and interface properties of pulsed-laser-deposited NiMnSb films on a Si(100) substrate as a function of film thickness. As the thickness of films is reduced below 35 nm, formation of a porous layer is observed. Porosity in this layer increases with decrease in NiMnSb film thickness. These morphological changes of the ultrathin films are reflected in the interesting transport and magnetic properties of these films. Compositional anomaly and surface and interface roughness are not the source of magnetic and transport properties of the films.

• OSTI ID: 20787846
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 73, Issue 3; Other Information: DOI: 10.1103/PhysRevB.73.035417; (c) 2006 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY ALLOYS
ENERGY BEAM DEPOSITION
INTERFACES
LASER RADIATION
LASERS
LAYERS
MAGNETIC PROPERTIES
MAGNETISM
MANGANESE ALLOYS
MORPHOLOGY
NICKEL ALLOYS
POROUS MATERIALS
PULSED IRRADIATION
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
SURFACES
THICKNESS
THIN FILMS