Elastic and surface energies: Two key parameters for CdSe quantum dot formation

Journal Article · Mon Jun 05 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2209202· OSTI ID:20779387

Robin, Ivan-Christophe; Andre, Regis; Bougerol, Catherine; Aichele, Thomas; Tatarenko, Serge ^[1]

---

1. Laboratoire de Spectrometrie Physique/CNRS UMR5588, Universite Joseph Fourier, Grenoble, BP87, 38402 St. Martin d'Heres (France)

The two-dimensional-three-dimensional transition of a strained CdSe layer on (001) ZnSe induced by the use of amorphous selenium is studied. To precisely control the thickness of the CdSe layer, atomic layer epitaxy growth mode is used. Atomic force microscopy and reflection high-energy electron diffraction measurements reveal the formation of CdSe islands when 3 ML (monolayers) of CdSe, corresponding to the critical thickness, are deposited. When only 2.5 ML of CdSe are deposited another relaxation mechanism is observed, leading to the appearance of strong undulations on the surface. For a 3 ML thick CdSe layer, transmission electron microscopy images indicate that the formation of the islands occurs only after the amorphous selenium desorption.

• OSTI ID: 20779387
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CADMIUM SELENIDES
CRYSTAL GROWTH
DESORPTION
ELECTRON DIFFRACTION
EPITAXY
LAYERS
QUANTUM DOTS
REFLECTION
SELENIUM
SEMICONDUCTOR MATERIALS
SURFACE ENERGY
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
ZINC SELENIDES