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Title: Effects of Al content on grain growth of solid solution (Ti,Al)N films

Abstract

Substitutional solid solution (Ti{sub 1-x}Al{sub x})N films with different Al contents (0{<=}x{<=}0.41) were deposited onto unheated Si(100) substrates by reactive unbalanced close-field magnetron sputtering in an Ar-N{sub 2} gas mixture. The effect of Al atomic concentration on the sizes of crystal grains during deposition was investigated. X-ray diffraction analysis revealed that the incorporated Al atoms had an obvious impact on the grain growth of (Ti{sub 1-x}Al{sub x})N films and the average crystal grain size showed an exponential decay with Al atomic concentration. A phenomenological model was proposed to analyze this solute-drag effect occurring during film deposition. It was found that the presence of solute drag in normal grain growth resulted in a low kinetic growth exponent, and the exponential decay in average grain size with solute atomic concentration could be reproduced in our calculations.

Authors:
;  [1]
  1. Department of Manufacturing Engineering and Engineering Management, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
Publication Date:
OSTI Identifier:
20776944
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films; Journal Volume: 24; Journal Issue: 1; Other Information: DOI: 10.1116/1.2148416; (c) 2006 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CRYSTALS; DEPOSITION; GRAIN GROWTH; GRAIN SIZE; MAGNETRONS; SOLID SOLUTIONS; SOLUTES; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM COMPOUNDS; X-RAY DIFFRACTION

Citation Formats

Liu, Z.-J., and Shen, Y.G. Effects of Al content on grain growth of solid solution (Ti,Al)N films. United States: N. p., 2006. Web. doi:10.1116/1.2148416.
Liu, Z.-J., & Shen, Y.G. Effects of Al content on grain growth of solid solution (Ti,Al)N films. United States. doi:10.1116/1.2148416.
Liu, Z.-J., and Shen, Y.G. Sun . "Effects of Al content on grain growth of solid solution (Ti,Al)N films". United States. doi:10.1116/1.2148416.
@article{osti_20776944,
title = {Effects of Al content on grain growth of solid solution (Ti,Al)N films},
author = {Liu, Z.-J. and Shen, Y.G.},
abstractNote = {Substitutional solid solution (Ti{sub 1-x}Al{sub x})N films with different Al contents (0{<=}x{<=}0.41) were deposited onto unheated Si(100) substrates by reactive unbalanced close-field magnetron sputtering in an Ar-N{sub 2} gas mixture. The effect of Al atomic concentration on the sizes of crystal grains during deposition was investigated. X-ray diffraction analysis revealed that the incorporated Al atoms had an obvious impact on the grain growth of (Ti{sub 1-x}Al{sub x})N films and the average crystal grain size showed an exponential decay with Al atomic concentration. A phenomenological model was proposed to analyze this solute-drag effect occurring during film deposition. It was found that the presence of solute drag in normal grain growth resulted in a low kinetic growth exponent, and the exponential decay in average grain size with solute atomic concentration could be reproduced in our calculations.},
doi = {10.1116/1.2148416},
journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
number = 1,
volume = 24,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2006},
month = {Sun Jan 15 00:00:00 EST 2006}
}