Highly efficient microcrystalline silicon solar cells deposited from a pure SiH{sub 4} flow
A time-resolved optical emission spectroscopic study identified transient behavior of the excited SiH emission in a parallel plate SiH{sub 4}/H{sub 2} plasma. The transient behavior could be prevented by filling the background gas with H{sub 2} prior to plasma ignition. Applying this condition, state-of-the-art microcrystalline silicon ({mu}c-Si:H) could be deposited irrespective of the applied H{sub 2} flow, ultimately demonstrated by a 9.5% efficient solar cell deposited from pure SiH{sub 4}. The results are discussed in terms of SiH{sub 4} back diffusion: an initial diffusion flux of SiH{sub 4} from the reactor's dead volume back into the plasma.
- OSTI ID:
- 20776932
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 26; Other Information: DOI: 10.1063/1.2152115; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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