DCEMS Study of Thin Stainless Steel Films Deposited by RF Sputtering of AISI316L

Journal Article · Tue Apr 26 04:00:00 EDT 2005 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.1923642· OSTI ID:20722124

Nomura, K; Iio, S; Ujihira, Y; Terai, T ^[1]

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1. School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

Thin stainless steel films were prepared on SiO2/Si plate heated at 100 deg. C and 400 deg. C using AISI316L as target, by a RF magnetron Ar sputtering method. RF sputtered-deposited films and the oxidized surface layers by post heating were characterized by depth selective conversion electron Moessbauer spectroscopy (DCEMS) using a He+5%CH4 gas proportional counter. The as-deposited films consisted of magnetic phases, the magnetic orientation of which had a tendency to be perpendicular to the surface of the film. In the case of the deposited films at substrate temperature of 100 deg. C, a small amount of Fe2O3 and ferritic stainless steel formed by post-heating in air. A magnetic subcomponent and a austenite phase were formed in the films deposited at substrate temperature of 400 deg. C. {alpha}-Fe2O3 and magnetite formed easily on the top and middle layers of the films by post-heating in air. The oxide states of the films deposited at different temperatures of substrate were clearly distinguished by post-heating. Thus it was found by DCEMS that the structures of the deposited films were strongly affected by the preparation method and the temperature of the substrate.

• OSTI ID: 20722124
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 765; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
ANNEALING
AUSTENITE
DEPOSITION
ELECTRON SPECTROSCOPY
FERRITIC STEELS
HELIUM
IRON OXIDES
MAGNETITE
METHANE
MOESSBAUER EFFECT
PROPORTIONAL COUNTERS
SPUTTERING
STAINLESS STEELS
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS