Polarization behaviors of (Bi{sub 3.15}Nd{sub 0.85})Ti{sub 3}O{sub 12} thin films deposited by radio-frequency magnetron sputtering

Journal Article · Tue Nov 15 04:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2131192· OSTI ID:20719807

Gao, X S; Xue, J M; Wang, J ^[1]

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1. Department of Materials Science and Engineering, Faculty of Engineering, National University of Singapore, Singapore 117576 (Singapore)

Ferroelectric (Bi{sub 3.15}Nd{sub 0.85})Ti{sub 3}O{sub 12} (BNdT) thin films of random orientation have been successfully deposited on Pt/Ti/SiO{sub 2}/Si(001) by radio-frequency magnetron sputtering, followed by rapid thermal annealing at 700 deg. C. They exhibit a remanent polarization 2P{sub r} of 23.2 {mu}C/cm{sup 2} and a coercive field E{sub C} of 112 kV/cm at an applied voltage of 10 V. These BNdT films also show a switchable polarization ({delta}P=P{sub sw}-P{sub ns}) of 12.9 {mu}C/cm{sup 2} at 5 V, together with an almost fatigue-free behavior up to 1.4x10{sup 10} switching cycles at both 100 and 150 deg. C. They demonstrate desirable retention and imprint behaviors at 100 deg. C, while a further increase in temperature up to 150 deg. C led to an acceleration in both retention loss and imprint behavior, which can be accounted for by the thermally assisted redistribution of defects and space charges. Studies of the ac dependence of relative permittivity suggest the occurrence of domain-wall pinning, which is a commonly observed phenomenon in oxide ferroelectric thin films.

• OSTI ID: 20719807
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BISMUTH COMPOUNDS
CRYSTAL DEFECTS
DEPOSITION
ELECTRIC POTENTIAL
FERROELECTRIC MATERIALS
NEODYMIUM COMPOUNDS
PERMITTIVITY
PLATINUM
POLARIZATION
RADIOWAVE RADIATION
SILICON
SILICON OXIDES
SPACE CHARGE
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TITANATES
TITANIUM