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Instability of Drift Waves in Two-Component Solid-State Plasma

Journal Article · · Semiconductors
DOI:https://doi.org/10.1134/1.2042588· OSTI ID:20719367
;  [1]
  1. Institute of Radiophysics and Electronics, National Academy of Sciences, Kharkov, 61085 (Ukraine)

The instabilities of longitudinal waves in infinite semiconductor plasma containing charge carriers of two types are considered under the assumption that the thermal velocity of electrons slightly exceeds that of holes. The main result of this study is that instability can occur in intrinsic semiconductors if the electron drift velocity is lower than the thermal velocity. Drift wave instabilities are studied in intrinsic semiconductors and semiconductors with identical plasma frequencies of electrons and holes. The influence of dissipation on the instability of these waves is also considered.

OSTI ID:
20719367
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 39; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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