Interface effect of InSb quantum dots embedded in SiO{sub 2} matrix

Journal Article · Mon Aug 15 00:00:00 EDT 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.72.075341· OSTI ID:20719334

Dongliang, Chen; Jiangwei, Fan; Shiqiang, Wei ^[1]; Chaosheng, Li; Zhengang, Zhu ^[2]

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1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029 (China)
2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031 (China)

The interface effect of InSb quantum dots (QDs) embedded in SiO{sub 2} matrix has been investigated by Raman scattering spectroscopy, x-ray diffraction (XRD), and x-ray absorption fine structure (both of EXAFS and XANES). The EXAFS and XRD results show clearly that the bond length of the Sb-In first shell of the InSb QDs contracts slightly about 0.02 A compared with that of the bulk InSb. The Raman scattering spectrum of the InSb QDs reveals that the lattice contraction partly weakens the phonon confinement effect. The coordination geometry at the interface of the InSb QDs is mainly Sb (In)-O covalent bridge bonds. The Sb K-XANES calculations of InSb QDs embedded in SiO{sub 2} matrix based on FEFF8 indicate that the intensity increase and the broadening of the white line peak of Sb atoms are essentially attributed to both the increase of Sb p-hole population and the change of Sb intra-atomic potential {mu}{sub 0}(E) affected by the SiO{sub 2} matrix. Our results show that the interface effect between the InSb QDs and the SiO{sub 2} matrix leads not only to the slight lattice contraction of InSb QDs and the large structural distortion in the interface area of InSb QDs, but also to the significant change of the Sb intra-atomic potential and the obvious charge redistribution around Sb atoms.

• OSTI ID: 20719334
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 7 Vol. 72; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ATOMS
BOND LENGTHS
CONFINEMENT
COVALENCE
FINE STRUCTURE
HOLES
INDIUM ANTIMONIDES
INTERFACES
PHONONS
POTENTIALS
QUANTUM DOTS
RAMAN EFFECT
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON OXIDES
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY