In Situ Characterization of Ge Nanocrystals Near the Growth Temperature

Journal Article · Thu Jun 30 04:00:00 EDT 2005 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.1994255· OSTI ID:20719092

Sharp, I D; Xu, Q; Liao, C Y; Chrzan, D C; Haller, E E ^[1]; Yi, D O ^[2]; Beeman, J W; Liliental-Weber, Z; Yu, K M; Zakharov, D N; Ager, III, J W ^[2]

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1. Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 (United States)
2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

We present in situ electron diffraction data indicating that Ge nanocrystals embedded in a silica matrix can be solid at temperatures exceeding the bulk Ge melting point. Supercooling is observed when returning from temperatures above the melting point of the Ge nanocrystals. Since melting point hysteresis is observed, it is not clear if nanoclusters are solid or liquid during the initial growth process. Raman spectra of as-grown nanocrystals give a measure of compressive stress and in-situ Raman spectroscopy further confirms the presence of crystalline Ge above 800 deg. C.

• OSTI ID: 20719092
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 772; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRON DIFFRACTION
GERMANIUM
HYSTERESIS
MELTING POINTS
NANOSTRUCTURES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SILICA
STRESSES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K