Lock in of magnetic stripe domains to pinning lattices produced by focused ion-beam patterning

Journal Article · Thu Sep 01 00:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2030412· OSTI ID:20714093

Konings, Stan; Miguel, Jorge; Luigjes, Jeroen; Schlatter, Hugo; Luigjes, Huib; Goedkoop, Jeroen; Gadgil, Vishwas ^[1]

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1. van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-1018 XE Amsterdam (Netherlands)

With focused ion-beam irradiation it is possible to engineer the anisotropy of magnetic films on nanometer length scales. We used this technique to write square lattices of artificial domain-wall pinning centers in a perpendicular anisotropy GdFe film displaying a well-defined stripe domain pattern. We observe a clear lock in of the intrinsic meandering stripe pattern to the pinning lattices, resulting in highly ordered domain patterns. We find that at remanence the dots pin the domain walls, while in perpendicular applied magnetic fields they host the down domains.

• OSTI ID: 20714093
• Journal Information: Journal of Applied Physics, Vol. 98, Issue 5; Other Information: DOI: 10.1063/1.2030412; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANISOTROPY
GADOLINIUM ALLOYS
ION BEAMS
IRON ALLOYS
MAGNETIC FIELDS
NANOSTRUCTURES
THIN FILMS