Molecular-beam epitaxial growth and characteristics of highly uniform InAs/GaAs quantum dot layers

Journal Article · Fri Jul 15 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1985969· OSTI ID:20713987

Zetian, Mi; Bhattacharya, Pallab ^[1]

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1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

We have investigated the molecular-beam epitaxial growth and structural and photoluminescence characteristics of self-organized InAs/GaAs quantum dot bilayers, in which a first seed layer of stressor dots is followed by a GaAs barrier layer and a second layer of active dots. At room temperature, the peak emission wavelength is at {approx}1.4 {mu}m. By optimizing the growth parameters for both dot layers and the GaAs barrier layer, we have measured photoluminescence linewidths of 10.6 and 17.5 meV at 20 and 300 K, respectively. The measurement and analysis of temperature-dependent photoluminescence data indicate that there is no observable carrier redistribution amongst the dots with an increase of temperature and there is a high degree of size uniformity. The photoluminescence linewidth of 17.5 meV at 300 K is almost identical to that measured in the emission from a single dot, indicating that the linewidth is determined by homogeneous broadening.

• OSTI ID: 20713987
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
LINE BROADENING
LINE WIDTHS
MEV RANGE 10-100
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS