Ion mass dependence of the etch yield of SrTiO{sub 3} films in reactive plasmas
- Departement de Physique, Universite de Montreal, Montreal, Quebec (Canada)
The influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO{sub 3} films in Ar/SF{sub 6} plasmas is investigated using a parametric approach. The etch yield is found to decrease as the concentration fraction of molecular ions increases. Introducing the concept of effective mass for both ions and SrTiO{sub 3}, these experimental results are quantitatively explained in the framework of a well-established model originally developed to describe the sputtering of single-atom materials by noble monoatomic ions.
- OSTI ID:
- 20709800
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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