Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy

Journal Article · Mon Nov 06 04:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102336· OSTI ID:5246965

Steinbruchel, C ^[1]

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1. Center for Integrated Electronics and Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (US)

Physical and ion-enhanced chemical etch yields are shown to be a linear function of the square root of the ion energy down to the etching threshold for self-sputtering of metals, sputtering of metals by noble gas ions, sputtering of Si and SiO{sub 2} by noble gas and reactive ions, and ion beam enhanced chemical etching of Si. The threshold energy must be taken into account for a quantitative description of etch yields even at intermediate ion energies. The relationship between the dependence of etch yields on ion energy and incident angle is also discussed.

• OSTI ID: 5246965
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:19; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL REACTION YIELD
COLLISIONS
ELEMENTS
ENERGY
ETCHING
ION COLLISIONS
IONS
METALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPUTTERING
SURFACE FINISHING
THRESHOLD ENERGY
YIELDS